A theoretical study on the stimulated Raman scattering modulated by the flopping frequency arising from the interaction between a strong resonant field and the medium

Hsu, Chimei James (1978) A theoretical study on the stimulated Raman scattering modulated by the flopping frequency arising from the interaction between a strong resonant field and the medium. Doctoral (PhD) thesis, Memorial University of Newfoundland.

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Abstract

The stimulated Raman scattering (SRS), arising from the interaction between molecules of a medium and two strong light fields - a resonant field and a pumping field - is studied theoretically. The transitions of molecules between a given pair of levels is assumed to be both Raman active and infrared active. A semiclassical approach, in which the density matrix method is used for the quantum mechanical description for the medium, is employed. We expand the density matrix in various orders within which the zeroth-order is referred to as the solution of the equation of motion of the density matrix when only the resonant field is applied. -- We obtain a set of equations in second order of the density matrix element p₁₀⑵ (ω) from which the gain function can be derived. This set of equations in the special case of steady state is accidentally similar to those obtained by Mollow in his study of the power spectrum of a strong driven two-level system. We have shown that the SRS in the steady state under the resonant field interaction, is drastically reduced in general. When the flopping frequency is larger than the relaxation constants (Ω > r), we find there appears both weak positive and weak negative gains on both sides of the ordinary SRS components. Since we retain our second-order equations in a general form rather than the form for steady state, we are able to take account of the dependence on the transient zeroth solution. By employing the Laplace transform technique with the help of convolution products, we are able to solve for ρ₁₀⑵(ω) in the stationary flopping state. When the intensity of the resonant field is high, we have found theoretically that both the Stokes and anti-Stokes component become doublets and equally displaced by the amount of the flopping frequency, Ω, on the opposite sides of ordinary Stokes and anti-Stokes components, respectively. The gain maxima are approximately the order of Ω/4r times the ordinary gain of the Stokes component, where Ω/r >> 1 if the flopping exists. The gains are therefore large in comparison with the ordinary gain for SRS in the steady state.

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