Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

Poduska, Kristin M. and Ryan, Bernard J. and Chatman, Shawn (2008) Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO. Applied Physics Letters, 92. ISSN 1077-3118

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Abstract

Constant-potential electrochemical synthesis of ZnO on metal substrates enables selective formation of either Ohmic or Schottky-barrier contacts. Using a mildly acidic nitrate-based aqueous electrolyte, there is a substrate-dependent deposition potential below which electrodeposited ZnO heterojunctions display Schottky response with high contact resistances (~10^5 Ω) and above which Ohmic behavior and low contact resistances (~1 Ω)occur. Voltammetric evidence for Zn metal deposition, in conjunction with Schottky-barrier heights that are consistent with values expected for a ZnO–Zn junction, suggests that more negative deposition potentials create a Zn-based interface between the substrate and ZnO that leads to rectifying behavior.

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