FIT–2, A SIMULATION–BASED PARAMETER EXTRACTION PROGRAM

Zuberek, W. M. and Konczykowska, A. (1991) FIT–2, A SIMULATION–BASED PARAMETER EXTRACTION PROGRAM. Technical Report. Memorial University of Newfoundland, St. John's, Newfoundland and Labrador.

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Abstract

Accurate and reliable simulation of circuit behavior cannot be obtained without ade- quate device models. FIT–2 is an interactive program for extraction of transistor parameters for SPICE–like circuit simulators. It is based on a circuit simulator rather than an explicit set of model equations. Basic advantages of the proposed approach include: (1) explicit model equations need not be known as they are provided by the circuit simulation tool used, (2) fitting can be performed not only for single devices but for functional blocks or whole circuits as well, and (3) the same extractor can be used for a variety of devices and/or device models. Several optimization methods are built into the program to provide robust as well as efficient fitting of device characteristics. Flexibility of the approach is obtained by specification of extraction details in the data sets rather than the extraction procedure. Parameter extraction for heterojunction bipolar transistors (HBT) is used as an illustration of FIT-2 capabilities. The effects of optimization methods on extraction performance are presented. Several directions for further research are identified.

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